Gallium Nitride Semiconductor Devices Market Innovations: Advancements Enhancing Performance
The global gallium nitride semiconductor devices market size was estimated at USD 2.56 billion in 2023 and is projected to grow at a CAGR of 26.4% from 2024 to 2030. The growth of the market can be attributed to the ability of gallium semiconductors to provide high-speed performance as well as contribute to lower carbon emissions, which position them as effective devices in the field of electronics. Gallium Nitride (GaN) possesses a wide band gap that makes the device more compact and capable of handling larger electric fields. As GaN possesses a wider band gap (approximately 3.4 eV) in contrast to silicon (1.2 eV), it facilitates higher carrier density, exceptionally low resistance, and capacitance, contributing to better speeds of 100 times faster. In addition, the integration of GaN technology across diverse sectors such as optoelectronics, automotive, and data centers has been instrumental in driving the growth of the market. The automotive sector is currently experiencing